California NanoSystems Institute
CNSI
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Kang Wang, Ph.D.

   
Raytheon Chair Professor, Physical Electronics
Director, FENA
Associate Director, California NanoSystems Institute
Professor of Engineering, UCLA, Electrical Engineering

Education:
Degrees:
Ph.D., M.I.T., 1970

Honors and Awards:
European Material Research Society, Best Paper (1999)
FENA Focus Center, 2003 Director
IEEE, Fellow
Politechnico University, Torino, Italy, Guest University Professor and Honoris Causa
Semiconductor Research Corporation, Inventer Awards (1989-1994)
Semiconductor Research Corporation, Inventor Awards (1996-1998)
TSMC, Honor Lectureship (2004)
Tsinghua University and Nanjing University, China, Honorary Professor

Certifications:
Professional Societies:
American Physical Society American Vacuum Society, American Physical Society American Vacuum Society
Editorial Board of the Encyclopedia of Nanoscience and Nanotechnology (American Scientific Publishers), Editorial Board of the Encyclopedia of Nanoscience and Nanotechnology (American Scientific Publishers)
Eta Kappa Nu Member, Eta Kappa Nu Member
Handbook of Semiconductor Nanostructures and Nanodevices, Editor
IEEE, IEEE
International Symposium on Silicon Molecular Beam Epitaxy, International Symposium on Silicon Molecular Beam Epitaxy

Contact Information:
Email Address: wang@ee.ucla.edu
Work Address: UCLA
Department of Electrical Engineering
Box 951594
Los Angeles, CA 90095
UNITED STATES
Work: http://www.drl.ee.ucla.edu
Work: http://www.fena.org
Home Page: http://www.win-nano.org/
ARR Papers: http://www.cnsi.ucla.edu/arr/personnel-papers?personnel_id=113594
Work Phone Number: (310) 825-1609
Research Interests:

Professor Wang's research focuses on nanoscience and nanotechnology, nanoelectronics and nanophotonics, MBE, self assembly of quantum dots and other materials, and quantum structures. Devices of interest: nanowires and nanodot CMOS, detector, spintronics micro-wave and millimeter electronics/optoelectronics, and quantum computing as well as new Nanoarchitecture for new information processing and nanosystems.


Technical Research Interest:

Dr. Wang's interest in nanoscience technology include self-assembly of quantum dots, nano-fabrication technology for nanoelectronics, photonics and sensors applications. He is a leader in Nanotechnology. In nanoelectronics, he studies the power dissipation of electronic and spintronic devices and the use of these devices for information processing. His prior work leads to the use of strained SiGe in CMSO and in optoelectronics such as integrated Ge and infrared detectors. He was the founding director of Nanoelectronics Research Facility at UCLA (established in 1989) with the infrastructure to further research in nanotechnology, which led to the recent establishment of California NanoSystems Institute, funded by the State of California, the first of its kind in the nation. He leads the MARCO Center on FENA to address the issues and opportunities for nanoelectronics devices and their implementation in information processing from the fundamental atomic and molecular level. The Center currently has over 30 investigators from 12 leading universities in the nation.


Additional Information:

Kang L. Wang received the B.S.E.E. from the National Cheng Kung University, Taiwan, in 1964. He earned both the M.S.E.E. and the Ph.D. in electrical engineering from M.I.T., in 1966 and 1970, respectively.

Prof. Wang has been with the Electrical Engineering Department at UCLA since 1979. He was Chair of the department from 1993 to 1996. He is a Fellow of the IEEE, and a member of the American Physical Society, the Materials Research Society, the Eta Kappa Nu Society, the Sigma Xi Society and the Phi Tau Phi Honor Society.

Prof. Wang has recieved awards which include the Semiconductor Research Corporation Inventor Award (consecutively from 1989 through 1994, and again from 1996 through 1998). In 1995 he was also honored with the Semiconductor Research Corporations Technical Excellence Award and the Best Paper Award from the European Material Research Society. His other honors include the J.H. Ahlers Achievement Award and the Guggenheim Fellow Award from the Max Planck Institute in Stuttgart, Germany. He has chaired many international conferences and symposia.



Selected Publications:

Changyong Song, Raymond Bergstrom, Damien Ramunno-Johnson, Huaidong Jiang, David Paterson, Martin D. de Jonge, Ian McNulty, Jooyoung Lee, Kang L. Wang, and Jianwei Miao, Nanoscale Imaging of Buried Structures with Elemental Specificity Using Resonant X-Ray, Physical Review Letters, 2008.
Liu, F. Bao, M. Wang, K. L. Liu, X. Li, C. Zhou, C. , Determination of the small band gap of carbon nanotubes using the ambipolar random telegraph signal, Nano Lett, 2005, 5 (7), 1333-6.
S. Tong, J.Y. Lee, H.J. Kim, F. Liu, K.L. Wang., Ge dot mid-infrared photodetectors, Optical Materials, 2005, 27, 1097-1100.
F. Liu, M. Bao, C. Li, C W Zhou, K. L. Wang., Giant random telegraph signals in the carbon nanotubes as single defect probe, Applied Physics Letters, 2005, 86, 163102-1~163102-3.
F. Liu, M. Bao, C. Li, C W Zhou, K. L. Wang., One-dimensional transport of In2O3 nanowires, Applied Physics Letters, 2005, 86, 213101-1~213101-3.
K.L. Wang, S. Tong, H.J. Kim., Properties and applications of SiGe nanodots, Materials Science in Semiconductor Processing, 2005, 8, 289-399.
M. Bao, F. Liu, and F. Baron and K.L. Wang., Tunneling spectroscopy of metal-oxide-semiconductor field-effect transistor at low temperature, Applied Physics Letters, 2005, 86, 242104-1.
T. Suligoj, H. Liu, J.K.O. Sin, K. Tsui, R. Chu, K.J. Chen, O. Biljanovic, K.L. Wang., A low-cost horizontal current bipolar transistor (HCBT) technology for the BiCMOS integration with FinFETs, Solid State Electronics, 2004, 48 (10-11), 2047-50.
Y. Zhang, F.A. Baron, Z. Krivokapic, K.L. Wang., Complementary single-electron/hole action of nanoscale SOI CMOS transistors, IEEE Electron Device Letters, 2004, 25 (7), 492-494.
Wang, K. L. , Issues of nanoelectronics: a possible roadmap, J Nanosci Nanotechnol, 2002, 2 (3-4), 235-66.